Next-Gen SiC MOSFETs Unveiled by Qingchun Semiconductor and VBsemi to Power EV Fast Charging and Energy Storage
April 21, 2025 — Two prominent players in the power semiconductor industry, Qingchun Semiconductor and VBsemi, have each announced the launch of their third-generation silicon carbide (SiC) MOSFET product platforms, marking a significant leap forward in high-efficiency fast charging and high-power-density applications.
April 21, 2025 — Two prominent players in the power semiconductor industry, Qingchun Semiconductor and VBsemi, have each announced the launch of their third-generation silicon carbide (SiC) MOSFET product platforms, marking a significant leap forward in high-efficiency fast charging and high-power-density applications.
Qingchun Semiconductor Debuts 3rd-Gen SiC MOSFET Platform
Qingchun Semiconductor unveiled its third-generation SiC MOSFET platform, with its flagship device S3M008120BK achieving a record-low on-resistance of just 8mΩ at room temperature. The chip's specific on-resistance (Rsp) is rated at 2.1 mΩ·cm², placing it among the industry’s most advanced.
This milestone continues a steady trajectory of innovation from the company. Rsp values have improved generation over generation — from 3.3 mΩ·cm² in its first-gen products, to 2.8 mΩ·cm² in the second generation, and now reaching 2.1 mΩ·cm². The third-gen SiC devices offer significantly reduced conduction losses (about 20% lower than previous-gen chips), enhanced short-circuit robustness, and improved dynamic switching performance, including a 30% reduction in body diode peak reverse current.
Rated at 1.2kV with continuous current above 220A, the S3M008120BK is designed to deliver maximum efficiency in electric vehicle motor drives, enabling longer driving ranges through better energy conversion.
Additionally, Qingchun’s recent strategic collaboration with Silan Microelectronics aims to support 8-inch SiC wafer mass production by 2026, leveraging Qingchun’s technology and Silan’s manufacturing infrastructure to develop advanced planar and trench-type SiC MOSFETs.
VBsemi Launches 3rd-Gen SiC MOSFETs for EV Fast Charging and Energy Storage
VBsemi (Micro Blue Semiconductor) also announced the release of its third-generation SiC MOSFETs, specifically targeting EV DC fast charging, energy storage systems (ESS), and vehicle-to-grid (V2G) applications.
The new lineup features significantly reduced switching losses—by over 50%, enabling system efficiencies exceeding 96%. Compared to traditional IGBT-based solutions, VBsemi's SiC MOSFETs cut down on thermal energy loss and cooling requirements, making them ideal for compact and thermally demanding deployments.
Key products, such as the VBP112MC100, feature low on-resistance of 21mΩ at 100A in compact TO-247 packages, allowing high current delivery with minimal PCB footprint. All products undergo extensive reliability testing for high-temperature and high-humidity environments, ensuring robust field performance.
At the recent Munich Shanghai Electronics Fair, VBsemi showcased a wide array of SiC solutions, including the STD45N10F7-VB, VBGQT1102, VBGM1102, VBGL1103, VBGL1805, and VBGE1805, drawing strong interest from industry stakeholders.
Market Implication
With power semiconductors playing a pivotal role in accelerating EV adoption, grid-level energy storage, and renewable integration, these third-generation SiC MOSFETs are expected to reshape the competitive landscape. Qingchun Semiconductor and VBsemi’s advances underscore a growing trend: performance and efficiency gains through materials innovation and process scaling—pushing SiC deeper into high-growth application spaces.
