Qingchun Semiconductor Launches Third-Generation SiC MOSFET Platform, Unlocking New Efficiency for EV Powertrains

April 2025 – Qingchun Semiconductor has officially introduced its third-generation silicon carbide (SiC) MOSFET product platform, setting a new benchmark in high-efficiency power device technology. The platform debuts with the high-performance S3M008120BK, featuring an ultra-low on-resistance of just 8mΩ at room temperature and delivering industry-leading specific on-resistance (Rsp) of 2.1 mΩ·cm².

This advanced SiC MOSFET platform leverages proprietary process technologies to significantly improve current handling capabilities while reducing conduction losses. The result is a major leap forward in power density and energy conversion efficiency, making it ideal for high-performance electric vehicle (EV) motor drive applications and helping to extend driving range.

Key Features of the S3M008120BK

Rated Voltage: 1.2kV

Rated Current: Over 220A

Threshold Voltage: 2.7–2.8V at room temperature

Conduction Loss: Reduced by 20% vs. previous generation under equivalent die area

Package Size: Optimized for compact, high-efficiency designs

The device demonstrates outstanding thermal performance, maintaining low on-resistance even at elevated temperatures. Compared with previous generations, the third-gen chip achieves enhanced conduction efficiency while maintaining robust short-circuit withstand capabilities, a feature not commonly seen in conventional chip scaling methods.

Enhanced Switching and Reverse Recovery Performance

The third-generation platform further reduces parasitic capacitance, boosting switching speeds. Notably, the reverse recovery characteristics of the MOSFET’s internal body diode have been significantly improved:

Reverse Recovery Peak Current (Irrm): Reduced by ~30%

Softness Factor (tb/ta): Greatly optimized

Voltage Overshoot (Vrrm): Substantially minimized

These enhancements are critical for high-speed switching applications and multi-chip parallel systems, improving dynamic current sharing and minimizing switching losses.

Proven Reliability for Demanding Applications

The new platform retains the robust reliability of previous generations and passes extensive qualification tests including:

HTGB (High-Temperature Gate Bias)

Gate Oxide Lifetime (Marathon Test)

H3TRB (High Humidity High Temperature Reverse Bias)

C-HTRB (Combined Stress Test)

Dynamic Reliability Tests (DRB, DGS)

Test results show excellent parameter stability before and after dynamic stress testing, confirming suitability for main drive and high-reliability multi-chip designs in EV and industrial environments.

Competing on a Global Stage

Qingchun Semiconductor’s third-generation SiC MOSFETs now align with the technical benchmarks of the most advanced international competitors. With continuous innovations in design and manufacturing, the company is well-positioned to deliver higher value to customers and drive the evolution of the global power electronics industry.