Memory Giants Accelerate Next-Generation Technology Development
The era of artificial intelligence (AI) is driving greater demand for high-performance, high-capacity memory technologies, prompting manufacturers to accelerate the development of next-generation memory solutions.
https://ic-online.com/contactsThe era of artificial intelligence (AI) is driving greater demand for high-performance, high-capacity memory technologies, prompting manufacturers to accelerate the development of next-generation memory solutions.
According to recent reports, Samsung plans to introduce equipment for the "NRD-K" project later this month, aiming to speed up the advancement of next-generation memory technologies, including 1d DRAM and V11, V12 NAND.
The NRD-K project is Samsung Electronics' next-generation semiconductor R&D hub, where cutting-edge semiconductor processes are researched, developed, and distributed. Samsung's 1d DRAM features a new structural design and packaging technology, providing significant improvements in performance and energy efficiency. Similarly, V11 and V12 NAND promise breakthroughs in memory density and energy efficiency, making them suitable for data centers and high-performance computing.
Currently, DRAM technology is advancing toward the 10nm scale. Micron's latest process is the 1γ (gamma) DRAM, with trial production using EUV underway at its Fab15 facility in Hiroshima, Japan. The company plans to commence mass production by 2025. Samsung's latest technology, 1c DRAM, is expected to establish production lines by the end of 2024, with production starting in 2025. 1d DRAM, Samsung's next-generation technology, supports higher bandwidth for more efficient data transfer, enhancing overall system performance.
In the NAND sector, manufacturers are focused on increasing layer count, with commercially available NAND products already exceeding 200 layers. Manufacturers are aiming to reach the milestone of 1,000 layers. Samsung began mass production of its ninth-generation 3D NAND technology, featuring 290 layers, in 2024. The company aims to further increase the layer count and performance in the coming years, including the V11 and V12 NAND technologies.
Micron successfully mass-produced 232-layer 3D NAND chips in 2022, and is now striving for even higher layer counts. Kioxia has also achieved over 200-layer NAND stacking and plans to reach 1,000 layers by 2027, according to its 3D NAND flash development roadmap.
