8-Inch Silicon Carbide: Tiankeheda Beijing Phase II Project Breaks Ground

On November 12, Beijing Tiankeheda Semiconductor Co., Ltd. (hereinafter referred to as "Tiankeheda") held a groundbreaking ceremony for its "Third-Generation Semiconductor Silicon Carbide Substrate Industrialization Base Construction Phase II Project" in Beijing.

The Phase II project is located in the southeast area of Daxing New Town, Daxing District, Beijing, on plot 0605-022C, adjacent to the existing facilities. The total site area covers 52,790.032 square meters, with a total construction area of 105,913.29 square meters, including production plants, a chemical warehouse, hazardous waste storage, general solid waste storage, a comprehensive building, and a guardhouse.

The company plans to purchase equipment for crystal growth, crystal processing, and wafer processing, and build a new 6-8 inch silicon carbide substrate production line and an R&D center, along with related supporting facilities.

The project aims to expand the company's silicon carbide crystal and wafer production capacity, as well as establish an R&D center to continuously optimize and improve production processes and parameters. Upon completion, the project is expected to achieve an annual output of approximately 371,000 conductive silicon carbide substrates, including 236,000 6-inch substrates and 135,000 8-inch substrates.

Tiankeheda stated that this expansion project aims to create an industry-leading smart production line to mass-produce 8-inch silicon carbide substrates. Once fully operational, the company's production capacity will be significantly increased, further strengthening its leading position in the silicon carbide substrate market.