Innoscience Unveils Breakthrough GaN Product Lineup at Key Industry Events
In a significant showcase of innovation, Innoscience recently unveiled a range of cutting-edge gallium nitride (GaN) power solutions at Electronica China in Shanghai and the CSE Compound Semiconductor Expo in Wuhan. These new releases highlight the company's focus on high-efficiency, high-density GaN technology for next-generation applications in data centers, AI servers, robotics, and automotive power systems.
In a significant showcase of innovation, Innoscience recently unveiled a range of cutting-edge gallium nitride (GaN) power solutions at Electronica China in Shanghai and the CSE Compound Semiconductor Expo in Wuhan. These new releases highlight the company's focus on high-efficiency, high-density GaN technology for next-generation applications in data centers, AI servers, robotics, and automotive power systems.
GaN Innovations Powering Next-Gen Data Centers
At the center of the exhibit were several next-gen GaN-based solutions tailored for high-performance data center infrastructure. These include:
100V GaN with En-FCLGA double-sided cooling package: A globally first mass-produced product, offering 65% better thermal conductivity compared to conventional packaging.
INV100FQ030C – the world’s first 100V bidirectional GaN device (VGaN): Packaged in FCQFN4x6, it supports both forward and reverse conduction and shutdown. Designed for 48V battery management systems (BMS) and load switch protection, it features ultra-low Rds(on) and a broader safe operating area (SOA).
ISG6121TD – high-power GaN power IC with integrated gate driver and short-circuit protection: Using a TO-247-4L package, it enables Titanium Plus efficiency in high-frequency switching power architectures for AI server PSUs, on-board chargers (OBC), and DC-DC converters, delivering up to 2–3 times the power density of traditional designs.
2kW Four-Phase Interleaved Buck Converter: New for 2025, this design uses one INS2002FQ and four INN100EA035A GaN devices per phase, achieving over 98% efficiency and flexible scalability.
4.2kW Server Power Supply Solution: Jointly developed with customers, this high-efficiency PSU reduces light- and mid-load power loss by at least 30%, exceeding 96% conversion efficiency.
Mass Production of 1200V GaN for EV Platforms
Innoscience also confirmed mass production of its 1200V GaN-on-Si device, optimized for 800V electric vehicle platforms. This breakthrough enhances onboard charging efficiency, reduces form factor, extends driving range, and lowers total system cost.
Driving the GaN Revolution
As a global leader in GaN-on-Silicon technology, Innoscience continues to push the limits of power electronics by delivering high-frequency, high-efficiency solutions for a range of demanding applications. This product launch underscores GaN’s rising role in enabling energy-efficient power conversion across key industries and reflects Innoscience’s commitment to advancing the compound semiconductor ecosystem.
