Zhongxin Wafer Achieves Technological Breakthrough with 12-inch BCD Silicon Wafer Product
Recently, Zhongxin Wafer announced a significant technological breakthrough with its 12-inch lightly doped BCD (Bipolar-CMOS-DMOS) silicon wafer product, achieving an industry-leading yield rate. The product has been validated by both domestic and international customers and is now in mass production.
Recently, Zhongxin Wafer announced a significant technological breakthrough with its 12-inch lightly doped BCD (Bipolar-CMOS-DMOS) silicon wafer product, achieving an industry-leading yield rate. The product has been validated by both domestic and international customers and is now in mass production.
Zhongxin Wafer stated that its 12-inch lightly doped BCD silicon wafer benefits from advanced COP Free and BMD-controlled crystal growth technologies, along with a high-flatness, high-purity product processing platform. These innovations ensure the product exhibits excellent performance and will continue to be supplied in large volumes moving forward.
BCD (Bipolar-CMOS-DMOS) technology is crucial for power integrated circuits. By combining the advantages of analog, digital, and power technologies, it provides stable performance and excellent electrical parameters. This enhances chip reliability, reduces electromagnetic interference, and reduces the chip’s size. The technology is widely used in power management, analog data acquisition, and power devices, among other applications.
