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Infineon Announces First 8-Inch SiC Products, Paving the Way for Next-Gen Power Applications

Infineon Technologies has officially launched its first 8-inch silicon carbide (SiC) products, marking a significant milestone in the company’s efforts to enhance SiC technology adoption. These next-generation power semiconductors, manufactured at Infineon’s Villach facility in Austria, are set to revolutionize high-voltage applications across renewable energy, railway systems, and electric vehicles (EVs).

Infineon Technologies has officially launched its first 8-inch silicon carbide (SiC) products, marking a significant milestone in the company’s efforts to enhance SiC technology adoption. These next-generation power semiconductors, manufactured at Infineon’s Villach facility in Austria, are set to revolutionize high-voltage applications across renewable energy, railway systems, and electric vehicles (EVs).

Strategic Expansion and Manufacturing Advancements

Infineon is actively scaling its production capabilities, with major developments at its Kulim manufacturing site in Malaysia. The transition from 150mm (6-inch) to 200mm (8-inch) wafer production is in full swing, with the newly constructed Module 3 plant set to enter large-scale manufacturing based on market demand.

The company’s €2 billion investment in the Kulim plant underscores its commitment to meeting the surging demand for SiC components. Module 3, which began operations in 2022, will initially focus on 6-inch wafer production, with a complete shift to 8-inch wafers anticipated by 2027. Infineon has already secured over €5 billion in new design orders and an additional €1 billion in prepayments from existing and new customers, including six major automotive original equipment manufacturers (OEMs).

Virtual Factory Integration: Boosting SiC Production Efficiency

Infineon is leveraging a "virtual collaborative factory" model to synchronize operations between its Kulim and Villach facilities. This integrated approach allows for streamlined technology sharing, faster production ramp-up, and optimized efficiency in SiC and gallium nitride (GaN) power semiconductor manufacturing.

The company enhanced Villach's SiC and GaN production capabilities in 2023, ensuring a steady supply of advanced materials for next-generation energy solutions. Infineon aims to achieve an annual revenue of approximately €7 billion from SiC products once the full transition to 200mm wafer production is completed. Additionally, the company is targeting a 30% share of the global SiC market by 2030.

Advancing SiC Technology for High-Performance Applications

Infineon has been making strides in SiC-based semiconductor technology. In May 2024, the company introduced its second-generation (G2) CoolSiC™ MOSFET series, featuring ultra-low conduction and switching losses. Compared to existing 650V SiC and silicon MOSFETs, the new 400V SiC MOSFETs provide 99.5% efficiency in AI server power supplies, improving energy density to over 100W/in³ and achieving a 0.3 percentage point efficiency gain over standard 650V solutions.

Automotive Sector Gains: Powering the 800V EV Future

On January 29, 2025, Power Electronics World reported that global automotive supplier Forvia Hella has chosen Infineon’s 1200V automotive-grade SiC MOSFETs for its next-generation 800V DC/DC charging solution. Infineon’s CoolSiC MOSFETs, packaged in Q-DPAK, are designed to enhance on-board chargers (OBC) and DC/DC converters in 800V electric vehicle platforms. This collaboration further solidifies Infineon’s leadership in SiC-based automotive power electronics.

As the global demand for efficient, high-performance power semiconductors grows, Infineon’s latest advancements in 8-inch SiC wafer production will play a crucial role in enabling sustainable energy, next-gen electric mobility, and AI-driven power infrastructure.

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