IC Onlineerai
MOSFET 2N-CH 10V 8SOICRoHS / Compliance

Images are for reference only

ALD1110ESAL

MOSFET 2N-CH 10V 8SOIC

Series
EPAD®
Packaging
Tube
Technology
MOSFET (Metal Oxide)
Part Status
Not For New Designs
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerAdvanced Linear Devices Inc.
SeriesEPAD®
PackagingTube
TechnologyMOSFET (Metal Oxide)
FET Feature-
Part StatusNot For New Designs
Power - Max600mW
ManufacturerAdvanced Linear Devices Inc.
Configuration2 N-Channel (Dual) Matched Pair
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id1.01V @ 1µA
Base Product NumberALD1110
Operating Temperature0°C ~ 70°C (TJ)
Rds On (Max) @ Id, Vgs500Ohm @ 5V
Supplier Device Package8-SOIC
Gate Charge (Qg) (Max) @ Vgs-
Drain to Source Voltage (Vdss)10V
Input Capacitance (Ciss) (Max) @ Vds2.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C-
Package
-
MSL
-

Related Products