Series
DTMOSIV
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
RoHS Compliant
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Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Toshiba Semiconductor and Storage |
| Grade | - |
| Series | DTMOSIV |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ Id | 3.7V @ 1.9mA |
| Base Product Number | TK39J60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 19.4A, 10V |
| Power Dissipation (Max) | 270W (Tc) |
| Supplier Device Package | TO-3P(N) |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
Package
-
MSL
-