STMicroelectronics and Innoscience Announce Strategic GaN Technology Partnership to Power Future Electronics

On April 1st, STMicroelectronics (ST) officially announced a major strategic partnership with Innoscience, aiming to jointly develop and manufacture gallium nitride (GaN) power technologies. The collaboration is set to combine the strengths of both integrated device manufacturers (IDMs) to enhance the performance, scalability, and resilience of the global GaN supply chain.

Empowering the Next Generation of Power Electronics

The partnership will focus on developing next-generation GaN-based power solutions targeting key sectors such as:

AI data centers

Renewable energy (generation and storage)

Automotive electronics, including EVs and autonomous platforms

GaN, as a third-generation semiconductor material, offers superior power efficiency, compact design, and low thermal loss, making it ideal for high-frequency, high-density power conversion systems.

Cross-Manufacturing Capabilities for Global Supply Chain Resilience

One of the key highlights of this agreement is mutual access to each other’s front-end GaN manufacturing capacities:

ST will produce Innoscience’s GaN wafers at its facilities outside of China.

Innoscience will manufacture ST’s proprietary GaN wafers at its China-based fabs.

This flexible cross-production strategy significantly enhances both companies’ ability to serve diverse global markets while mitigating geopolitical and logistical risks.

Synergy of Two GaN Powerhouses

STMicroelectronics, with its well-established Si and SiC power portfolios, sees GaN as a crucial addition to its energy-efficient product line-up. Leveraging the IDM model, ST aims to accelerate GaN deployment across its global customer base.

Innoscience, a GaN technology pioneer, was the first to achieve volume production of 8-inch GaN-on-Si wafers. The company has shipped over 1 billion GaN devices across voltage ranges from 15V to 1200V, offering robust solutions from discrete devices to integrated power ICs and modules.

In 2024, Innoscience achieved RMB 828 million in revenue, marking a 39.8% year-over-year growth. Notably:

Revenue from consumer electronics rose by 48%

Automotive-grade GaN deliveries surged by 986.7%

AI and data center-related shipments jumped by 669.8%

A Shared Vision for Greener, Smarter Power

Both companies emphasized that GaN will be key to building more compact, energy-efficient, and sustainable electronic systems. As data centers and electrified transport demand ever-higher power density and performance, GaN adoption is expected to grow exponentially.

This partnership not only reinforces each company’s global manufacturing footprint, but also sets the stage for joint innovation in future GaN technologies, potentially redefining efficiency standards across multiple high-growth sectors.