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MOSFET 2N-CH 10.6V 8PDIPRoHS / Compliance

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ALD114913PAL

MOSFET 2N-CH 10.6V 8PDIP

Series
EPAD®
Packaging
Tube
Technology
MOSFET (Metal Oxide)
FET Feature
Depletion Mode
Datasheet (PDF)
RoHS Compliant

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Original Packaging

Factory sealed, ESD anti-static tray

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Humidity indicator card & silica gel included

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ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerAdvanced Linear Devices Inc.
SeriesEPAD®
PackagingTube
TechnologyMOSFET (Metal Oxide)
FET FeatureDepletion Mode
Part StatusActive
Power - Max500mW
ManufacturerAdvanced Linear Devices Inc.
Configuration2 N-Channel (Dual) Matched Pair
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Vgs(th) (Max) @ Id1.26V @ 1µA
Base Product NumberALD114913
Operating Temperature0°C ~ 70°C (TJ)
Rds On (Max) @ Id, Vgs500Ohm @ 2.7V
Supplier Device Package8-PDIP
Gate Charge (Qg) (Max) @ Vgs-
Drain to Source Voltage (Vdss)10.6V
Input Capacitance (Ciss) (Max) @ Vds2.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C12mA, 3mA
Package
-
MSL
-

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