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MOSFET 2N-CH 30V 10A DIERoHS / Compliance

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EPC2100ENGRT

MOSFET 2N-CH 30V 10A DIE

Series
eGaN®
Packaging
Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)
Part Status
Obsolete
Datasheet (PDF)
RoHS Compliant

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Original Packaging

Factory sealed, ESD anti-static tray

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Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

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Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR)
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusObsolete
Power - Max-
ManufacturerEPC
Configuration2 N-Channel (Half Bridge)
Mounting TypeSurface Mount
Package / CaseDie
Vgs(th) (Max) @ Id2.5V @ 4mA, 2.5V @ 16mA
Base Product NumberEPC210
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 15V, 19nC @ 15V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V, 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Ta)
Package
-
MSL
-

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