IC Onlineerai
MOSFET 2N-CH 80V 9.5A/38A DIEIn StockRoHS / Compliance

Images are for reference only

EPC2105

MOSFET 2N-CH 80V 9.5A/38A DIE

Series
eGaN®
Packaging
Tape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Technology
GaNFET (Gallium Nitride)
Part Status
Last Time Buy
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusLast Time Buy
Power - Max-
ManufacturerEPC
Configuration2 N-Channel (Half Bridge)
Mounting TypeSurface Mount
Package / CaseDie
Vgs(th) (Max) @ Id2.5V @ 2.5mA, 2.5V @ 10mA
Base Product NumberEPC210
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V, 10nC @ 5V
Drain to Source Voltage (Vdss)80V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V, 1100pF @ 40V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Package
-
MSL
-

Related Products