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MOSFET 3N-CH 100V 9BGAIn StockRoHS / Compliance

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EPC2107

MOSFET 3N-CH 100V 9BGA

Series
eGaN®
Packaging
Tape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Technology
GaNFET (Gallium Nitride)
Part Status
Last Time Buy
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusLast Time Buy
Power - Max-
ManufacturerEPC
Configuration3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting TypeSurface Mount
Package / Case9-VFBGA
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Base Product NumberEPC210
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Supplier Device Package9-BGA (1.35x1.35)
Gate Charge (Qg) (Max) @ Vgs0.16nC @ 5V, 0.044nC @ 5V
Drain to Source Voltage (Vdss)100V
Input Capacitance (Ciss) (Max) @ Vds16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Package
-
MSL
-

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