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MOSFET 2N-CH 120V 3.4A DIEIn StockRoHS / Compliance

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EPC2110

MOSFET 2N-CH 120V 3.4A DIE

Series
eGaN®
Packaging
Tape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Technology
GaNFET (Gallium Nitride)
Part Status
Active
Datasheet (PDF)
RoHS Compliant

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Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
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Fast delivery
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Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusActive
Power - Max-
ManufacturerEPC
Configuration2 N-Channel (Dual) Common Source
Package / CaseDie
Vgs(th) (Max) @ Id2.5V @ 700µA
Base Product NumberEPC211
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Drain to Source Voltage (Vdss)120V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Current - Continuous Drain (Id) @ 25°C3.4A
Package
-
MSL
-

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