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GAN TRANS 200V 8MOHM BUMPED DIEIn StockRoHS / Compliance

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EPC2215

GAN TRANS 200V 8MOHM BUMPED DIE

FET Type
N-Channel
Packaging
Tape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategorySingle FETs, MOSFETs
ManufacturerEPC
Grade-
Series-
FET TypeN-Channel
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusActive
Mounting TypeSurface Mount
Qualification-
Package / CaseDie
Vgs(th) (Max) @ Id2.5V @ 6mA
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 5V
Power Dissipation (Max)-
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs17.7 nC @ 5 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds1790 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C32A (Ta)
Package
-
MSL
-

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