Series
SiC Power
Packaging
Bulk
Technology
Silicon Carbide (SiC)
Part Status
Active
RoHS Compliant
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | FET, MOSFET Arrays |
| Manufacturer | GE Aerospace |
| Series | SiC Power |
| Packaging | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 3.75kW |
| Manufacturer | GE Aerospace |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | AEC-Q101 |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Base Product Number | GE12160 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
Package
-
MSL
-