Series
HEXFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
RoHS Compliant
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Infineon Technologies |
| Grade | - |
| Series | HEXFET® |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | DirectFET™ Isometric MN |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Supplier Device Package | DIRECTFET™ MN |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
Package
-
MSL
-