FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+22V, -6V
Technology
SiCFET (Silicon Carbide)
RoHS Compliant
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Rohm Semiconductor |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-3PFM, SC-93-3 |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Base Product Number | SCT2H12 |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Power Dissipation (Max) | 35W (Tc) |
| Supplier Device Package | TO-3PFM |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Package
-
MSL
-