Two Global Companies Join Forces to Secure Gallium Supply for Defense and Semiconductor Industries

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Recently, Nimy Resources Ltd, a mining company based in Perth, Western Australia, and M2i Global Inc (Minerals Metals Initiatives), headquartered in Nevada, USA, signed a non-binding cooperation agreement to ensure a stable supply of gallium to support the U.S. Department of Defense (DoD).

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This collaboration not only reflects strategic defense needs but also highlights the shifting dynamics in the global gallium nitride (GaN) industry.

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Defense and Supply Chain Security at the Core

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M2i Global focuses on developing and executing critical mineral value chains essential for U.S. defense, economic security, and free-trade partnerships. The company operates through its subsidiaries US Minerals Inc. and Metals Corp, which specialize in engineering, research, and services for secure access to critical minerals and metals.

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Nimy Resources' Chairman, Neil Warburton, emphasized that the diversification of gallium supply chains remains a core strategic goal. He stated,

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“Our mission is to strengthen the U.S. critical material supply by ensuring a secure and reliable flow of essential resources.”

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M2i Global’s President and CEO, retired Major General Al Rosendo, added that the company is actively working to expand manufacturing capacity and investment priorities to secure a domestic, sustainable supply of gallium and other critical materials needed for advanced semiconductor technologies.

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Gallium: A Critical Component for the GaN Semiconductor Industry

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Gallium is a key material in compound semiconductors, particularly gallium nitride (GaN), which is composed of gallium (Ga) and nitrogen (N). GaN is highly valued for its superior electronic properties and plays a critical role in next-generation power electronics, telecommunications, and defense applications.

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In the defense sector, GaN is indispensable in technologies such as radar systems, aerospace electronics, and advanced military communications. With the U.S. government prioritizing industrial self-sufficiency, ensuring a stable gallium supply has become a top priority.

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GaN Industry Accelerates Breakthroughs

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Advantages of GaN in Power and RF Applications

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Compared to traditional silicon-based semiconductors, GaN offers:
Higher power efficiency and faster switching speeds
Greater thermal conductivity for better heat dissipation
Higher breakdown voltage, making it ideal for high-power applications
Radiation resistance, making it suitable for aerospace and defense systems

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Current Market Trends and Challenges

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Globally, the GaN industry is witnessing rapid growth and intense competition. The supply chain remains a critical factor, particularly at the upstream level, where GaN substrates and epitaxial wafers face cost and production challenges.

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While single-crystal GaN substrates offer superior performance, high production costs have led manufacturers to use alternative substrates such as sapphire, SiC, and silicon. However, GaN-on-silicon technology faces lattice mismatch and thermal expansion issues, which affect device efficiency.

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Current GaN Substrate Developments:
2-inch to 4-inch GaN substrates are commercially available
4-inch GaN wafers are widely adopted, while 6-inch wafers are in development
R&D efforts are focused on increasing substrate size and reducing costs

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Diverse Business Models in the GaN Industry

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GaN device manufacturers operate under two primary models:
Integrated Design & Manufacturing – Companies handle both design and fabrication
Fabless & Foundry Collaboration – Companies focus on design, outsourcing production to third-party foundries

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Expanding Market Applications Driving Demand

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GaN technology is widely adopted across multiple sectors, including: