NewsSamsung Achieves Breakthrough in 400-Layer NAND Technology
Samsung Electronics has announced a significant advancement in NAND flash memory technology with the successful development of its 400-layer NAND technology. The milestone was achieved at Samsung’s Semiconductor R&D Center, with the technology now being transferred to mass production lines at the Pyeongtaek P1 facility since November. This breakthrough positions Samsung at the forefront of NAND innovation as it competes with industry players like SK Hynix, which recently commenced production of 321-layer NAND.












