China Develops First High-Voltage Radiation-Resistant Silicon Carbide Power Device
On January 21, the Institute of Microelectronics at the Chinese Academy of Sciences (CAS) announced a significant breakthrough: the successful development of China's first high-voltage radiation-resistant silicon carbide (SiC) power device. This achievement marks a new milestone for China in the field of semiconductor power devices.
On January 21, the Institute of Microelectronics at the Chinese Academy of Sciences (CAS) announced a significant breakthrough: the successful development of China's first high-voltage radiation-resistant silicon carbide (SiC) power device. This achievement marks a new milestone for China in the field of semiconductor power devices.
A Collaboration for Advanced Technology
The innovative device was developed by the team led by Liu Xinyu and Tang Yidan at the Institute of Microelectronics, in collaboration with Liu Yanmin's team from the CAS Space Application Engineering and Technology Center. The project also produced an accompanying power system, showcasing the potential of domestically developed SiC technology.
Why Silicon Carbide?
Silicon carbide, as a leading material in the third-generation semiconductor family, boasts several key advantages over traditional silicon-based materials:
Wide Bandgap: Allows higher voltage tolerance.
High Breakdown Electric Field: Ensures superior performance under high-power conditions.
Fast Saturated Electron Velocity: Enables higher operational frequencies.
These characteristics make SiC devices ideal for high-voltage, high-frequency, and high-temperature environments. The technology not only promises improved energy efficiency but also holds transformative potential in fields like electric vehicles (EVs), smart grids, and railway systems.
Strategic Impact
The successful development of this high-voltage radiation-resistant SiC power device has profound strategic implications:
Space Applications: The device’s radiation resistance ensures reliable performance in satellites, space stations, and other spacecraft, advancing China’s deep-space exploration capabilities.
Energy Efficiency: Its ability to handle high-power operations supports critical infrastructure such as renewable energy grids and high-performance EV systems.
National Security: By reducing dependence on imported technologies, this innovation strengthens China's autonomy in semiconductor manufacturing.
Applications in Space Exploration
The CAS revealed that the SiC-based power system will undergo space validation tests to evaluate:
The application of SiC diodes and SiC MOSFET devices in space power systems.
The performance of SiC devices under various radiation effects.
The potential for boosting the power capacity of aerospace digital power systems, aiming for single-module power output in the kilowatt range.
Overcoming R&D Challenges
This groundbreaking technology is the result of years of intensive research and development, overcoming significant challenges in:
Material Growth: Optimizing crystal structures and enhancing material purity to ensure stability under high voltage.
Device Design: Reducing on-resistance and improving switching speed through innovative design.
Manufacturing: Implementing advanced processes to improve device uniformity and yield.
A Future of Innovation
The successful development of the high-voltage radiation-resistant SiC power device is a testament to the growing capabilities of China's semiconductor sector. Its potential applications in aerospace, energy, and transportation industries position it as a cornerstone technology for next-generation innovation.
