Jingchi Electromechanical Begins Delivery of 8-Inch Silicon Carbide (SiC) Equipment
Jingchi Electromechanical recently announced that its newly developed 8-inch silicon carbide (SiC) resistance-type crystal growth furnace has passed customer validation and commenced small-scale deliveries.
Jingchi Electromechanical recently announced that its newly developed 8-inch silicon carbide (SiC) resistance-type crystal growth furnace has passed customer validation and commenced small-scale deliveries.
Advanced Features of the 8-Inch SiC Crystal Growth Furnace
The furnace incorporates an innovative structural design, combining process control theory with advanced automation to ensure precise parameter control and highly intelligent operation during the crystal growth process. Key highlights include:
Innovative Thermal Field Design: Ensures uniform radial temperature and a wide, precisely adjustable axial temperature gradient.
High Thermal Field Stability: Enhances equipment lifespan and significantly improves crystal quality and yield.
Current Technologies in SiC Crystal Growth
Two primary methods dominate the SiC crystal growth landscape:
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Physical Vapor Transport (PVT):
The mainstream technique for SiC single-crystal production. PVT works by sublimating SiC powder into gaseous components at high temperatures, which then recrystallize onto a seed crystal under a temperature gradient. This method excels at producing high-purity, large-diameter crystals and has achieved widespread commercialization. - Resistance Heating Method:
A newer technique leveraging resistance or induction heating to control temperature gradients more effectively. This method minimizes defects, making it suitable for producing thicker, high-quality crystals. Resistance heating furnaces are compact, compatible with various heating methods, and deliver precise temperature control, meeting the demands of growing 6–8-inch SiC single crystals. 
Competitive Landscape in SiC Equipment Manufacturing
As the backbone of substrate growth, SiC crystal growth furnaces play a pivotal role in advancing the industry. Many domestic manufacturers are actively innovating in this domain:
Lenko Semiconductor (May 2024): Released an 8-inch SiC growth furnace with compact design and flexible process adaptability.
Youjing Technology (June 2024): Successfully passed technical reviews for its 8-inch resistance-type SiC crystal growth equipment.
Jingsheng Shares (July 2024): Delivered the first batch of 8-inch SiC growth equipment in Chongqing.
Songci Electromechanical (December 2024): Achieved successful production of 8-inch SiC single crystals using its advanced crystal growth furnace.
Strategic Importance
Silicon carbide long-crystal furnaces are critical in the production of SiC substrates, serving as a cornerstone for the industry. The introduction of Jingchi's 8-inch furnace, along with innovations from other manufacturers, highlights the accelerating development of SiC technology and its vital role in enabling high-performance semiconductors.
