FET Type
N-Channel
Packaging
Cut Tape (CT) || Tape & Box (TB)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Diotec Semiconductor |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Cut Tape (CT) || Tape & Box (TB) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 350mW (Ta) |
| Supplier Device Package | TO-92 |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Package
-
MSL
-