Speed
Fast Recovery =< 500ns, > 200mA (Io)
Packaging
Bulk
Technology
Schottky
Part Status
Active
RoHS Compliant
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Diode Arrays |
| Manufacturer | GeneSiC Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Packaging | Bulk |
| Technology | Schottky |
| Part Status | Active |
| Manufacturer | GeneSiC Semiconductor |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Base Product Number | MBR200200 |
| Diode Configuration | 1 Pair Common Anode |
| Supplier Device Package | Twin Tower |
| Current - Reverse Leakage @ Vr | 3 mA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 100 A |
| Current - Average Rectified (Io) (per Diode) | 100A |
Package
-
MSL
-