Series
PowerMESH™ II
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
RoHS Compliant
Why Choose Us
Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | STMicroelectronics |
| Grade | - |
| Series | PowerMESH™ II |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRF7 |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 5.3A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Package
-
MSL
-