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MOSFET 2N-CH 60V 23A DIERoHS / Compliance

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EPC2102ENGRT

MOSFET 2N-CH 60V 23A DIE

Series
eGaN®
Packaging
Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)
Part Status
Discontinued at Digi-Key
Datasheet (PDF)
RoHS Compliant

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Original Packaging

Factory sealed, ESD anti-static tray

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Humidity indicator card & silica gel included

Vacuum Sealing

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ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR)
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Part StatusDiscontinued at Digi-Key
Power - Max-
ManufacturerEPC
Configuration2 N-Channel (Half Bridge)
Mounting TypeSurface Mount
Package / CaseDie
Vgs(th) (Max) @ Id2.5V @ 7mA
Base Product NumberEPC210
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 5V
Supplier Device PackageDie
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 30V
Current - Continuous Drain (Id) @ 25°C23A (Tj)
Package
-
MSL
-

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