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MOSFET 2N-CH 1200V 475AIn StockRoHS / Compliance

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GE12047BCA3

MOSFET 2N-CH 1200V 475A

Series
SiC Power
Packaging
Box
Technology
Silicon Carbide (SiC)
Part Status
Active
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerGE Aerospace
Grade-
SeriesSiC Power
PackagingBox
TechnologySilicon Carbide (SiC)
FET Feature-
Part StatusActive
Power - Max1250W
ManufacturerGE Aerospace
Configuration2 N-Channel (Dual)
Mounting TypeChassis Mount
QualificationAEC-Q101
Package / CaseModule
Vgs(th) (Max) @ Id4.5V @ 160mA
Base Product NumberGE12047
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs4.4mOhm @ 475A, 20V
Supplier Device PackageModule
Gate Charge (Qg) (Max) @ Vgs1248nC @ 18V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds29300pF @ 600V
Current - Continuous Drain (Id) @ 25°C475A
Package
-
MSL
-

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