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MOSFET 2N-CH 60V 20A 8DFNIn StockRoHS / Compliance

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G20N06D52

MOSFET 2N-CH 60V 20A 8DFN

Series
TrenchFET®
Packaging
Tape & Reel (TR) || Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Part Status
Active
Datasheet (PDF)
RoHS Compliant

Why Choose Us

Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
Global Shipping
Fast delivery
Quick Response
Fast RFQ

Professional Packaging

Original Packaging

Factory sealed, ESD anti-static tray

Desiccant Protection

Humidity indicator card & silica gel included

Vacuum Sealing

Moisture barrier bag, nitrogen filled

Secure Boxing

Anti-vibration foam, shock-proof labeling

ParameterValue
CategoryFET, MOSFET Arrays
ManufacturerGoford Semiconductor
SeriesTrenchFET®
PackagingTape & Reel (TR) || Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET Feature-
Part StatusActive
Power - Max48W (Tc)
ManufacturerGoford Semiconductor
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberG20N
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs30mOhm @ 20A, 10V
Supplier Device Package8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds1326pF @ 30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Package
-
MSL
-

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