Series
U-MOSVI-H
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
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Quality Warranty
Quality guarantee
ESD Safe
Anti-static protection
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MOQ1 pcs
Professional Packaging
Original Packaging
Factory sealed, ESD anti-static tray
Desiccant Protection
Humidity indicator card & silica gel included
Vacuum Sealing
Moisture barrier bag, nitrogen filled
Secure Boxing
Anti-vibration foam, shock-proof labeling
| Parameter | Value |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Toshiba Semiconductor and Storage |
| Grade | - |
| Series | U-MOSVI-H |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-VDFN Exposed Pad |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Base Product Number | TPCC8003 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 6.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 22W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
Package
-
MSL
-